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| PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 FEATURES * NEW M03 PACKAGE: * Smallest transistor outline package available * Low profile/0.59 mm package height * Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.20.05 0.80.1 2 * * TK 3 1.4 0.1 0.45 (0.9) 0.45 0.30.1 DESCRIPTION The NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 1 0.20.1 0.590.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz Forward Current Gain at VCE = 3 V, IC = 10 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz A A pF 0.4 UNITS GHz dB dB 7 75 MIN NE685M03 2SC5435 M03 TYP 12 1.5 9 140 0.1 0.1 0.7 2.5 MAX California Eastern Laboratories NE685M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 9 5 2 30 125 150 -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 26 150 D.C. FORWARD CURRENT GAIN vs. COLLECTOR CURRENT DC Forward Current Gain, hFE Collector Current, IC (mA) 140 22 18 14 10 6 2 0 130 120 110 100 1.0 2.0 3.0 4.0 5.0 6.0 0 6 12 18 24 30 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) NE685M03 SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector Q1 LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 8.98e-17 107.1 0.99 22 0.55 1e-6 31.10 16.06 0.98 6 8.02e-3 0 2 0.6 10 8.34 0.009 5.07 0.50e-12 0.95 0.5 0.11e-12 0.56 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.19 0 0 0.75 0 0.5 4e-12 12 1 0.04 120 1e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 68533 0.13e-12 0.14e-12 0.3e-9 0.8e-9 0.08e-12 0.08e-12 0.12e-9 0.10e-9 0.12e-9 MODEL RANGE Frequency: 0.1 to 4.0 GHz Bias: VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA Date: 11/98 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 06/10/2002 |
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